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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB09N03LA G
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IPB09N03LA G

Manufacturer Part Number IPB09N03LA G
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 25V 50A TO263-3
Package PG-TO263-3-2
In Stock 6566 pcs
Data sheet IPB09N03LA GPart Number GuideMultiple Devices 04/Jun/2009
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 20µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series OptiMOS™
Rds On (Max) @ Id, Vgs 8.9mOhm @ 30A, 10V
Power Dissipation (Max) 63W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1642 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Base Product Number IPB09N

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IPB09N03LA G Datasheet PDF

Data sheet

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